 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio s Imaging Conditions Object illuminance: 0.1 lx Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2 IMAGING COMPARISON Using Resolution Test Chart Commercial 2/3-inch CCD EB-CCD N7640 OVERVIEW The EB-CCD is an absolutely new high-sensitivity imaging device that employs the "Electron Bombardment (EB)" effect for image intensification. The EB-CCD basically consists of a photocathode and a CCD chip arranged in parallel in a vacuum tube. An optical image is converted at the photocathode into an electron image, which is then accelerated and directly bombards the CCD surface to produce electron multiplication. Even a low-light-level image can be brought into view with a high S/N ratio. Two types of EB-CCD are available depending on the readout method: the N7640 designed to operate at the TV scan rate and the N7220 for slow scan readout. Both types are compact and simple in structure, and deliver high sensitivity yet ensure high S/N ratio. The EB-CCD will open up new applications as the next generation of low-light-level imaging devices. SENSITIVITY COMPARISON (Calculated data) TAPPB0068EA 1000 EB-CCD N7640 100 SENSITIVITY (V. J-1. cm-2) NORMAL 2/3" CCD 10 1 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) APPLICATIONS qHigh sensitivity video camera * Semiconductor wafer inspection * Real time fluorescence observation * Biochemical emission imaging * Biophoton imaging SPECTRAL RESPONSE 102 TII B0020EA CATHODE SENSITIVITY CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 101 FEATURES TV scan rate type qResolution qGain qDetection limit *1 400 TV lines 700 0.3 mlx 450 TV lines 1300 Detectable down to single photon region QUANTUM EFFICIENCY 100 10-1 Slow scan type qResolution qGain qDetection limit 10-2 100 200 300 400 500 600 700 800 900 1000 *1: Minimum illuminance on the photocathode required to produce an image. WAVELENGTH (nm) SPECIFICATIONS qEB-CCD Parameter Focusing Method Window Material Photocathode Maximum Supply Voltage Gain (Typ.)*2 Limiting Resolution (Typ.) Effective Area (H!V) Casing Material Lead Wire Sheath Dimension *2: N7640 at -6 kV, N7220 at -8 kV N7640 Proximity-focused Synthetic silica Multialkali -6 700 400 9.2 ! 6.8 -8 1300 450 12.2 ! 12.2 N7220 Unit kV TV lines mm mm Poly Oxy Methylene (POM) Teflon 53 ! 16.5 (excluding lead pins) qInternal CCD Parameter Drive Method CCD Format Pixel Size Number of Effective Pixels (H!V) Saturation Charge Dark Current Readout Noise*5 CCD Readout Frequency Vertical Clock Horizontal Clock Output N7640 Frame transfer 2/3 inch format 14 ! 14 658 ! 490 65 !103 *3 80 e- / (pixel*frame) 100 14 2 phases 2 phases MOSFET source follower, two stages with load N7220 Full frame transfer 1 inch format 24 ! 24 512 ! 512 200 !103 *4 300 e- / (pixel*s) 50 1 2 phases 2 phases MOSFET source follower, one stage Unit mm electrons e- RMS MHz - *3: At 25 C, MPP (Multi-Pinned Phase) operation, 33 ms/frame *4: At 0 C, MPP (Multi-Pinned Phase) operation *5: N7640 at 12 MHz, N7220 at 150 kHz qRatings Parameter Operating Temperature Range Storage Temperature Range Min. -30 -40 Max. +40 +40 Unit C C PHOTON COUNTING IMAGING EXAMPLE Slow Scan Type N7220 Exposure Time: 0.02 s Object Illuminance Exposure Time: 20 s 0.00002 lx qConditions Light source Object illuminance Lens F value Supply voltage Ambient temperature Tungsten lamp 2!10-5 lx 5.6 -8 kV -25 C (Resolution 450 TV lines) DIMENSIONAL OUTLINES (Unit: mm) TV Rate Type (Frame Transfer CCD) EFFECTIVE IMAGING AREA 9.2(H)!6.8(V) MIN. 9.2 N7640 6.9 0.1 15.2 0.2 PHOTOCATHODE (MULTIALKALI) 3.57 INDEX MARK CABLE LENGTH 200 MIN. RED 2.0 0.3 BLACK 0.5 0.2 16.5 0.3 5 0.3 INPUT WINDOW (SYNTHETIC SILICA) Input Side LEAD (TEFLON COVER) RED : PHOTOCATHODE (-HV) BLACK : OUTER FLANGE (GND) Output Side Slow Scan Type (Full Frame Transfer CCD) PHOTOCATHODE (MULTIALKALI) N7220 15.20.2 EFFECTIVE IMAGING AREA 12.2!12.2 MIN. 5.90.1 INDEX MARK CABLE LENGTH 200 MIN. RED 20.2 BLACK 0.5 0.2 16.5 0.3 5 0.3 INPUT WINDOW (SYNTHETIC SILICA) Input Side LEAD (TEFLON COVER) RED : PHOTOCATHODE (-HV) BLACK : OUTER FLANGE (GND) Output Side 1.78x11 =19.6 TAPPA0034ED 53-0.3 +0 19 29 1.78 0.15 TAPPA0037EA 53-0.3 6.8 +0 19 29 EB-CCD CAMERA C8080 The C8080 is an EB-CCD camera incorporating a TV scan type EB-CCD (N7640). The C8080 is designed for simple use and functions, yet capable of imaging at very low light levels. Hamamatsu also provides the C8081 power supply ideal for use with the C8080 EB-CCD camera. qSPECIFICATIONS Parameter EB-CCD Image Sensor Spectral Response Gain Effective Area Number of Effective Pixels (H ! V) Pixel Size Saturation Charge Frame Rate Image Output Method Operating Temperature Range Storage Temperature Range Humidity Range Input Voltage (Input Current) Dimension (W ! H ! D) Weight Specifications EB-CCD (N7640) Frame transfer CCD 185 to 900 200 to 700 8.58 ! 6.86 (2/3 inch format) 640 ! 480 14 ! 14 130 000 60 Hz interlace RS-170 (EIA) 0 to +40 -10 to +40 Below 90 (no condensation) +15 (500 mA), -15 (500 mA), +5 (500 mA) 90 ! 75 ! 160 Approx. 1.4 Unit nm mm m electrons C C % V mm kg qDEDICATED POWER SUPPLY C8081 (Option) Parameter Input Voltage Maximum Power Consumption Dimension (W ! H ! D) Weight Specifications 85 to 135 (50 Hz, 60 Hz) 90 161 ! 44 ! 213 Approx. 1.2 Unit V ac VA mm kg DIMENSIONAL OUTLINES (Unit: mm) q C8080 90 4.1 160 EB-CCD CAMERA 12 C8080 H.V. SWITCH GAIN CONTROL HV ON/OFF SENSITIVITY 75 MIN. VIDEO POWER MAX. CONTROL 41 40 C MOUNT DEPTH: 6 66 40 4-M3, DEPTH: 8 POWER INPUT (HIROSE HR10A-R13R-20SB) VIDEO SIGNAL OUTPUT (BNC) 8 1/4-20 UNC, DEPTH: 8 9 9 TAPPA0041EA Subject to local technical requirements and regulations, availability of products in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies and omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 2000 Hamamatsu Photonics K.K. HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TAPP1032E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it 32 OCT. 2000 (9910) IP Printed in Japan (1000) |
Price & Availability of N7640
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |